t4 - lds -0 303 -1 , rev. 1 ( 6/14/13 ) ?201 3 microsemi corporation page 1 of 8 1n5820us C 1n5822us and 1n6864us available on commercial versions 3 amp sq - melf schottky barrier rectifiers qualified per mil - prf - 19500/ 620 qualified levels * : jan, jantx, jantxv and jans description this series of 3 amp s chottky rectifiers are compact in their square melf packaging for high density mounting. the 1n5822us and 1n6864us are military qualified for high - reliability applications. b sq - melf (d- 5b ) package also available in : b packag e ( axial - leaded ) 1n 58 20 C 1n5 8 22, 1n6864 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered surface mount equivalents of 1n 58 20 C 1n5 8 22 and 1n6 864 numbers . ? hermetically sealed . ? metallurgically bonded . ? double plug construction. ? * jan, jantx, jantxv and jans qualifications are available per mil - prf - 19500/ 620 for 1n6822us and 1n6864us on ly . (see part nomenclature for all available options.) ? rohs compliant devices available (commercial grade only on the 1n6822us and 1n6864us ). applications / benefits ? small size for high density mounting (see package illustration) . ? non - sensitive to esd per mil - std - 750 method 1020. maximum ratings @ t a = + 25 o c unless otherwise noted. msc C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 tel: (978 ) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction temp erature t j - 65 to +1 25 o c storage temp erature t stg - 65 to +150 o c thermal resistance junction - to - end cap r ? j ec 10 o c/ w surge peak forward current @ t a = + 25 o c (test pulse = 8.3 ms, half - sine wave.) i fsm 80 a (pk) average rectified output current @ t ec = +5 5 o c (1) i o 3 a notes: 1. see f igures 3 and 4 for derating curves and for effects of v r on t j . the maximum t j depends on the voltage applied . downloaded from: http:///
t4 - lds -0 303 -1 , rev. 1 ( 6/14/13 ) ?201 3 microsemi corporation page 2 of 8 1n5820us C 1n5822us and 1n6864us mechanical and packaging ? case: voidless h ermetically s ealed h ard g lass. ? terminals : tin -l ead p late with >3% l ead. solder d ip is available upon request. rohs compliant matte - tin is available on commercial level s (no jan levels) . ? marking: body painted and a lpha n umeric. ? polarity: cathode indicated by band. ? tape & reel option: standard per eia - 481 -1- a with 12 mm tape. consult factory for quantities. ? see p ackage d imensions on last page. part nomenclature 1n5 8 20us C 1n5 821 us 1n 58 20 us (e3) jedec type number see e lectrical characteristics t able rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant surface mount package 1n5822us and 1n6864us only: jan 1n5822 us (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = commercial jedec type number see electrical characteristics t able rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant surface mount package symbols & definitions symbol definition c t capacitance: t he capacitance in pf at a frequency of 1 mhz and specified voltage. f frequency i r maximum reverse current: the maximum reverse (leakage) current that will flow at the sp ecified voltage and temperature. i o average rectified output current: the o utput c urrent averaged over a full cycle with a 50 hz or 60 hz sine - wave input and a 180 degree conduction angle. v f maximum forward voltage: the maximum forward voltage the device will exhibit at a specified current. v r reverse voltage: the dc voltage appli ed in the reverse direction below the breakdown region. v rwm working peak reverse voltage: the maximum peak voltage that can be applied over the operating t emperature range. downloaded from: http:///
t4 - lds -0 303 -1 , rev. 1 ( 6/14/13 ) ?201 3 microsemi corporation page 3 of 8 1n5820us C 1n5822us and 1n6864us electrical characteristics @ 25 o c unless otherwise noted. type number working peak reverse voltage maximum forward voltage v fm1 maximum forward voltage v fm2 maximum forward voltage v fm3 maximum reverse leakage current i rm @ v r m v rwm i fm = 1.0 a i fm = 3.0 a i fm = 9.4 a t j = +25 oc t j = +100 oc v (pk) volts volts volts ma ma 1n5820us 20 0.40 0.50 0.70 0.10 @ 20 v 12.5 @ 20 v 1n5821us 30 0.40 0.50 0.70 0.10 @ 30 v 12.5 @ 30 v 1n5822us 40 0.40 0.50 0.70 0.10 @ 40 v 12.5 @ 40 v 1n6864us 80 0.50 0.70 n/a 0.15 @ 80 v 18.0 @ 80 v downloaded from: http:///
t4 - lds -0 303 -1 , rev. 1 ( 6/14/13 ) ?201 3 microsemi corporation page 4 of 8 1n5820us C 1n5822us and 1n6864us graphs t j , junction temperature (o c) figure 1 typical reverse leakage current at rated piv (pulsed) v f , forward voltage, instantaneous (volts) figure 2 typical forward voltage i r , reverse current (ma) i f , forward current, instantaneous (amps) downloaded from: http:///
t4 - lds -0 303 -1 , rev. 1 ( 6/14/13 ) ?201 3 microsemi corporation page 5 of 8 1n5820us C 1n5822us and 1n6864us graphs (continued) t ec , (c) (end cap) figure 3 temperature c urrent d erating f or 1n5822us t ec , (c) (end cap) figure 4 temperature c urrent d erating f or 1n6864us sinewave operation maximum io rating (a) sinewave operation maximum io rating (a) downloaded from: http:///
t4 - lds -0 303 -1 , rev. 1 ( 6/14/13 ) ?201 3 microsemi corporation page 6 of 8 1n5820us C 1n5822us and 1n6864us graphs (continued) v f (v) figure 5 schottky v f C i f characteristics ( typical 1n5822 us ) v f (v) figure 6 schottky v f C i f characteristics ( typical 1n6864 us ) i f (a) i f (a) downloaded from: http:///
t4 - lds -0 303 -1 , rev. 1 ( 6/14/13 ) ?201 3 microsemi corporation page 7 of 8 1n5820us C 1n5822us and 1n6864us graphs (conti nued) pad area per pad (in 2 ) figure 7 thermal r esistance vs fr4 pad area still air with the pcb horizontal thermal resistance (c/w) downloaded from: http:///
t4 - lds -0 303 -1 , rev. 1 ( 6/14/13 ) ?201 3 microsemi corporation page 8 of 8 1n5820us C 1n5822us and 1n6864us package dimensions notes: 1. dimensions are in inches. millimeters are given for information only. 2. dimensions are pre - solder dip. 3. u - suffix parts are structurally identical to the us - suffix parts. 4. in accordance with asme y14.5 m, diameters are equivalent to x symbology. dim inch millimeters min max min max bd 0.137 0.148 3.48 3.76 ect 0.019 0.028 0.48 0.71 bl 0.200 0.225 5.08 5 .72 s 0.003 min. 0.08 min. downloaded from: http:///
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